Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1993-06-04
1995-05-16
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
437104, 437107, 437133, 556 70, C30B 2502
Patent
active
054151295
ABSTRACT:
Alkyl arsines are made by a reaction of gaseous arsine and the corresponding gaseous olefin in contact with at least one Bronsted acid catalyst. Products produced thereby are mono- and di-substituted arsines, e.g. alkyl and di-alkyl arsines, which contain substantially no metallic or oxygenating impurities.
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patent: 5068372 (1991-11-01), Kanjolia et al.
patent: 5124278 (1992-06-01), Bohling et al.
patent: 5274149 (1993-12-01), Calbick et al.
Calbick C. Joseph
Kuck Mark A.
Valentine Donald H.
Cytec Technology Corp.
Kunemund Robert
Van Riet F. M.
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