Compositions: ceramic – Ceramic compositions – Carbide or oxycarbide containing
Patent
1989-04-14
1990-09-18
Bell, Mark L.
Compositions: ceramic
Ceramic compositions
Carbide or oxycarbide containing
501 95, 264 66, C04B 3556
Patent
active
049578855
ABSTRACT:
A process for preparing a ceramic composite with improved properties is disclosed. A material which contains at least 85 percent of a mixture of silicon carbide and alumina is heated to a temperature of from about 350 to about 500 degrees centigrade and, after it reaches this temperature, maintained there for at least 5 minutes. Thereafter, the temperature of the material is raised to 1,250-1,350 degrees centigrade and, after reaching this temperature, the material is maintained there under a pressure of from about 5 to about 15 p.s.i. for at least 30 minutes. Thereafter, the temperature of the material is raised to 1,650-1,750 degrees centigrade, and it is thereafter maintained at such temperature for from about 30 to about 90 minutes.
REFERENCES:
patent: 1918317 (1933-07-01), Benner et al.
patent: 2854364 (1958-09-01), Lely
patent: 2862795 (1958-12-01), Lowe
patent: 2886454 (1959-05-01), Todd
patent: 3375073 (1968-03-01), McMullen
patent: 3704230 (1972-11-01), Loricchio
patent: 4069060 (1978-01-01), Hayashi et al.
patent: 4284612 (1981-08-01), Horne, Jr. et al.
patent: 4778778 (1988-10-01), Mallia et al.
"Study of Solid-State Aluminothermal Reactions: Influence of Activation and Moderation Processes" George T. Hida (Thesis, Israel Institute of Technology, Haifa, Israel, Apr. 1987).
Bell Mark L.
Benchmark Structural Ceramics Corporation
Greenwald Howard J.
Jones Deborah
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