Process for making a semiconductor MOS transistor using a fluid

Details Process for making a semiconductor MOS transistor using a fluid Process for making a semiconductor MOS transistor using a fluid

1994-12-16

1996-06-18

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 44, 437982, H01L 21266

Patent

active

055277195

ABSTRACT:
A process for formation of an MOS semiconductor device having an LDD structure is disclosed, which may include the steps of: forming an active region and an isolation region on a semiconductor substrate; forming a first insulating layer on the surface of the substrate; forming a gate electrode on the first insulating layer in the active region; foxing a layer of a heat sensitive fluid material on the gate electrode; carrying out a first ion implantation into the substrate; carrying out a first heat treatment on the heat sensitive layer; carrying out a second ion implantation into the substrate; removing the residual fluid material; forming a second insulating layer on the whole surface of the wafer; and carrying out a second heat treatment on the wafer.

REFERENCES:
patent: 4755479 (1988-07-01), Miura
patent: 4795718 (1989-01-01), Beitman
patent: 5284800 (1994-02-01), Lien et al.

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