Process for making a power MOSFET device and structure

Details Process for making a power MOSFET device and structure Process for making a power MOSFET device and structure

1994-08-29

1995-10-24

Wojciechowicz, Edward

Fishing, trapping, and vermin destroying

437 44, 437 45, 437150, 437913, 437933, 437953, 257341, 257412, 257328, H01L 21265, H01L 2978

Patent

active

054609860

ABSTRACT:
A method for making a stable low threshold voltage p-channel power MOSFET device having a p-type gate layer (14) includes incorporating a p-type dopant into the gate layer (14) formed over a gate oxide layer (13). The p-type dopant is incorporated within the gate layer (14) under conditions that minimize diffusion of p-type dopant through the gate oxide layer (13) into the channel regions (31, 32). The process reduces the number of process steps necessary to manufacture a power MOSFET device.

REFERENCES:
patent: 4484388 (1984-11-01), Iwasaki et al.
patent: 4830974 (1989-05-01), Chang et al.
patent: 5141895 (1992-08-01), Pfiester et al.
patent: 5189504 (1993-02-01), Nakayama et al.
patent: 5304831 (1994-04-01), Yilmaz et al.
Goodenough, Frank, "Submicron Process Yields P-Channel Power MOSFETs that Turn On At -2.7V", Electronic Design, Feb. 18, 1993.

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