Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-09-08
1980-05-06
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148 15, 148 335, 357 13, 357 15, 357 89, 357 90, 427 84, H01L 21205, H01L 2990
Patent
active
042016045
ABSTRACT:
A modified Read-type diode having an extremely thin doping spike and with the electric field in the drift region terminated before the buffer zone. The buffer zone and a drift region are first grown upon a doped semiconductor substrate using epitaxial vapor deposition growth techniques employing a furnace tube within a multiple temperature zone reaction furnace. The doping spike is produced by injecting under pressure a fixed predetermined volume of dopant into the furnace tube. An avalanche region is grown over the doping spike and a Schottky barrier contact or semiconducting material of the opposite conductivity type grown over the avalanche region. Avalanche regions having a length less than 15% of the total active length of the device and doping spikes having a width of 500 A or less are disclosed in a high-efficiency device.
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Schroeder et al., "Avalanche Region Width . . . Impatt Diodes", Proc. IEEE, vol. 59, No. 8, Aug. 1971, p. 1245-1248.
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Bierig Robert W.
Steele S. Robert
Pannone Joseph D.
Raytheon Company
Rutledge L. Dewayne
Saba W. G.
Sharkansky Richard M.
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