Process for making a multilayer metallization structure

Details Process for making a multilayer metallization structure Process for making a multilayer metallization structure

1989-05-09

1990-07-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 437228, 437947, H01L 2190

Patent

active

049435396

ABSTRACT:
A method for forming a via contact for devices having multilayer metallization is provided wherein a sacrificial layer is formed over a bottom interconnect layer, and an interlayer dielectric is formed on the sacrificial layer. A via is etched in the interlayer dielectric, exposing the sacrificial layer. The sacrificial layer is isotropically etched to expose an area of the interconnect metal that is larger than the area of the via and a via metallization is selectively formed on the interconnect metal by chemical vapor deposition so that the via, including a void created by the isotropic etch of the sacrificial layer, is filled with the via metallization, thereby providing a contact area to the bottom interconnect metal which is larger than the via metallization itself.

REFERENCES:
patent: 4634496 (1987-01-01), Mase et al.
patent: 4767724 (1988-08-01), Kim et al.
patent: 4786962 (1988-11-01), Koch
patent: 4824803 (1989-04-01), Us et al.
patent: 4826785 (1989-05-01), McClure et al.
patent: 4839311 (1989-06-01), Riley et al.
May, et al, J. Electrochem. Soc., vol. 135, No. 6, Jun. 1988, pp. 1592-1594.
Kang, et al., J. Electronic Materials, vol. 17, No. 3, 1988, pp. 213-216.
Green, M. L., "Applications of CVD W and CVD Al for ULSI Structures", Proceedings of the Electrochemical Society, Spring 1988, pp. 322-323.

Affiliated with

Also associated with

Rating

Process for making a multilayer metallization structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for making a multilayer metallization structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for making a multilayer metallization structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1267643