Process for making a mask used in x-ray photolithography

Details Process for making a mask used in x-ray photolithography Process for making a mask used in x-ray photolithography

1985-07-23

1986-08-26

Hoffman, James R.

Coating processes

Measuring, testing, or indicating

427160, B05B 500

Patent

active

046082689

ABSTRACT:
A method of manufacturing a mask for use in x-ray photolithography includes the steps of coating a set of wafers (20) with boron nitride (22). The tension in the boron nitride is measured by using a capacitive probe (26) to measure bowing in a set of test wafers. The remaining wafers are attached to a pyrex ring (28), and the boron nitride is removed from one side of the wafers. A circular hole is then eteched in the wafer, and a layer of tantalum (32) and gold (34) are formed on the remaining boron nitride membrane. The gold (34) is patterned via a sputter etching process. Power is reduced at the end of the sputter etching process slowly to reduce mechanical stress in the mask. The tantalum (32) is then etched via a reactive ion etching process. In this way, an x-ray transparent boron nitride membrane is used to support x-ray opaque gold.

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Shimkunas, A. R., "Advances in X-Ray Mask Technology", Solid State Technology, Sep. 1984, pp. 192-199.
Bromley et al, "Technique for the Determination of Stress in Thin Films", J. Vac. Sci. Technol. B, 1(4), Oct.-Dec. 1983, pp. 1364-1366.
"Accuracy Without Contact", Advertising Brochure published by Mechanical Technology Incorporated, (MTI).

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