Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1981-12-14
1984-09-04
Saba, William. G.
Metal working
Method of mechanical manufacture
Assembling or joining
29576E, 29578, 29580, 29591, 148175, 148187, 156648, 357 22, 357 23, 357 16, H01L 21223, H01L 2120
Patent
active
044688512
ABSTRACT:
An apparatus for and a method of making heterojunction source-drain insulated gate field-effect transistors in order to obtain higher gain-bandwidth products at microwave frequencies. A semi-insulating InP semiconductor substrate is provided with a ternary alloy layer of p-type Ga.sub.0.47 In.sub.0.53 As, or optionally, an acceptor-doped p-type bulk of Ga.sub.0.47 In.sub.0.53 As can be substituted. Troughs are shaped in the substrate and layer for receiving a material lattice-matched to the n.sup.+ p-type Ga.sub.0.47 In.sub.0.53 As to perform as the source and drain contacts, n.sup.+ doped InP might be a suitable material. An optional method for forming the contacts calls for directing a stream of phosphine and hydrogen onto source and drain contact windows contacting the Ga.sub.0.47 In.sub.0.53 As which is heated to 750.degree. C. for about 15 minutes. This creates graded heterojunction source and drain contacts having a lattice-matching variable composition.
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Clawson Arthur R.
Wieder Herman H.
Beers Robert F.
Johnston Ervin F.
Keough Thomas Glenn
Saba William. G.
The United States of America as represented by the Secretary of
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