Process for making a dual implanted drain extension for bucket b

Details Process for making a dual implanted drain extension for bucket b Process for making a dual implanted drain extension for bucket b

1981-08-18

1982-11-16

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148187, 357 23, H01L 2126

Patent

active

043588905

ABSTRACT:
The invention is the structure and process for making a bucket brigade device which comprises the merger of an MOS capacitor with an MOSFET device to form the charge transfer cell. A first thin N-type region is implanted at a first concentration in a portion of the P-type channel region of an FET device adjacent to the drain diffusion. A second region is implanted with N-type dopant at a second concentration less than the first concentration, adjacent to and continuous with the first implanted region. The N-type concentration in the second region is just sufficient to compensate for the P-type background doping in the channel region. This structure increases the charge transfer efficiency for the cell and reduces its sensitivity of the threshold voltage to the source-drain voltage. The gate for the device has a substantial overlap over the drain and a minimal overlap over the source and the gate to drain capacitance per unit area is maximized by maintaining a uniformly thin oxide layer across the gate region.

REFERENCES:
patent: 3767983 (1973-10-01), Berglund
patent: 3789267 (1974-01-01), Krambeck et al.
patent: 4087832 (1978-05-01), Jambotkar
patent: 4100513 (1978-07-01), Weckler
patent: 4142199 (1979-02-01), Simi et al.
patent: 4771229 (1979-10-01), Simi et al.

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