Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Isolation by pn junction only
Patent
1997-12-19
1999-12-21
Bowers, Charles
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Isolation by pn junction only
438296, 438637, 438675, 257365, H01L 2128, H01L 21336
Patent
active
060048611
ABSTRACT:
A semiconductor process including forming a gate dielectric on a semiconductor substrate. First and second conductive gates are then formed on the gate dielectric. The conductive gates are aligned over respective channel regions of the substrate. The channel regions are laterally displaced between respective pairs of source/drain regions. A first interlevel dielectric is then deposited on the substrate and source/drain vias are then formed in the interlevel dielectric. The source/drain vias terminate on the pairs of source/drain regions. Thereafter, a source/drain impurity is introduced into the source/drain regions to form source/drain structures. A conductivity type of the source/drain structures is opposite a conductivity type of the field region. The first interlevel dielectric substantially prevents the source/drain impurity from entering the field region of the semiconductor substrate. In this manner, adjacent source/drain regions displaced on either side of the field region 106 are isolated from one another.
REFERENCES:
patent: 5567650 (1996-10-01), Straight et al.
patent: 5705427 (1998-01-01), Chan et al.
patent: 5719089 (1998-02-01), Cherng et al.
patent: 5723381 (1998-03-01), Grewal et al.
patent: 5731242 (1998-03-01), Parat et al.
patent: 5763309 (1998-06-01), Chang
patent: 5780339 (1998-07-01), Liu et al.
patent: 5807779 (1998-09-01), Liaw
patent: 5869403 (1999-02-01), Becker et al.
patent: 5874353 (1999-02-01), Lin et al.
patent: 5880020 (1999-03-01), Mano
patent: 5929492 (1999-07-01), Okamura
Gardner Mark I.
Gilmer Mark C.
Advanced Micro Devices
Blum David S
Bowers Charles
Dewan Raman
Lally Joseph
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