Process for making a contact structure including polysilicon and

Details Process for making a contact structure including polysilicon and Process for making a contact structure including polysilicon and

1987-10-20

1989-12-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 437193, 437162, 437246, 437984, 148DIG20, H01L 21225, H01L 21283

Patent

active

048882976

ABSTRACT:
A multi-layer contact process is described for providing contact to a shallow semiconductor region forming a semiconductor PN junction and with a silicon semiconductor body. The multi-layer structure includes a layer of polycrystalline silicon doped with an impurity of the same conductivity type as that of the semiconductor region. A first layer of a refractory alloy is deposited over the polycrystalline silicon layer to provide electrically stable interface therewith. A second layer of another refractory metal or alloy is deposited over the first refractory metal alloy layer and serves to protect the shallow PN junction against current leakage failure. A third layer of interconnect metal is deposited over the multi-layer contact structure. The resulting structure provides a low resistance ohmic contact to a shallow semiconductor region with improved electrical characteristics.

REFERENCES:
patent: 3496428 (1970-02-01), De Volder
patent: 3664896 (1972-05-01), Duncan
patent: 3667008 (1972-05-01), Katnack
patent: 3833842 (1974-09-01), Cunningham et al.
patent: 3881242 (1975-05-01), Nuttall et al.
patent: 3900944 (1975-08-01), Fuller et al.
patent: 3900944 (1975-08-01), Fuller et al.
patent: 3906540 (1975-09-01), Hollins
patent: 4024953 (1977-08-01), Hall
patent: 4063967 (1979-12-01), Graul et al.
patent: 4096510 (1978-06-01), Arai et al.
patent: 4102733 (1978-06-01), De La Moneda et al.
patent: 4124934 (1979-11-01), De Brebisson
patent: 4141022 (1979-02-01), Sigg et al.
patent: 4146413 (1979-03-01), Yonezawa et al.
patent: 4157269 (1979-06-01), Ning et al.
patent: 4188707 (1980-02-01), Asano et al.
patent: 4265935 (1981-05-01), Hall
patent: 4267012 (1981-05-01), Pierce et al.
patent: 4287661 (1981-09-01), Stoffel
patent: 4343082 (1982-08-01), Lepselter et al.
patent: 4356040 (1982-10-01), Fu et al.
patent: 4531144 (1985-07-01), Holmberg
Shibata et al., IEEE IEDM Technical Digest, 1981, pp. 647-650.
Osburn et al., IBM Technical Disclosure Bulletin, vol. 24, No. 4, Sept. 1981, pp. 1970-1973.
Wittmer, M., "High-Temperature Contact Structures for Silicon Semiconductor Devices", Appl. Phys. Lett. 37(6), 15 Sept. 1980, pp. 540-542.
Lo, T. C., "Self Aligned Contact to a Doped Region", IBM Tech. Disc. Bull., vol. 23, No. 7A, Dec. 1980, pp. 2780-2781.
Reith, T. M., et al., "Sl/Pts; Schottky Barrier Diodes with a Diffusion Barrier", IBM Tech. Disc. Bull., vol. 16, No. 11, Apr. 1974, p. 3586.
Ku, S. M., "Ohmic Contacts for Small Shallow Structure Devices", IBM Tech. Disc. Bull., vol. 22, No. 4, Sept. 1979, pp. 1487-1488.
Babcock, S. E., et al., "Titanium-Tungsten Contacts to Si . . . ", J. Appl. Phys., 53(10), Oct. 1982, pp. 6898-6904.
Olowolafe, J. O., et al., "Contact Reaction between Si and Pd.W Alloy Films", J. Appl. Phys., 50(10), Oct. 1979, pp. 6316-6320.

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