Process for making a bipolar junction transistor with a self-ali

Details Process for making a bipolar junction transistor with a self-ali Process for making a bipolar junction transistor with a self-ali

1994-07-13

1996-03-26

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437162, 437 69, 148DIG10, H01L 21265

Patent

active

055019919

ABSTRACT:
In accordance with the invention, the emitter region of a BJT is formed prior to the formation of the base contact regions so that the base contact regions are not enlarged during a thermal cycle used to form the emitter and the base contact regions remain small. Preferably, the base contact regions are formed by ion implantation after the emitter is formed. In addition, the base interconnect links may be metal (or polycide) rather than polysilicon so that the base interconnect resistance is reduced. This results in the following advantages: reduced emitter-base junction leakage, reduced collector-base junction capacitance, and reduced base interconnection series resistance.

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patent: 5358879 (1994-10-01), Brady et al.
Hori et al., "A Self-Aligned Pocket Implantation (SPI) Technology for 0.2 micron Dual-Gate CMOS", IEEE Electron Device Letters, vol. 13, No. 4, Apr. 1992, pp. 174-176.
"Simplified Lightly Doped Drain Process", IBM Technical Disclosure Bulletin, vol. 30, No. 12, May 1988, pp. 180-181.

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