Coating processes – Electrical product produced – Condenser or capacitor
Patent
1982-06-28
1983-10-11
Smith, John D.
Coating processes
Electrical product produced
Condenser or capacitor
357 52, 427 93, H01L 21316
Patent
active
044092601
ABSTRACT:
The specification discloses a process for forming a coherent, uniform oxide layer on the surface of a selected semiconductor material by heating a wafer of the selected semiconductor material at a temperature of about 750.degree. C. or lower in the presence of a chosen oxygen-containing precursor and a chosen gas phase halogen-containing molecular reactant which reacts with the oxygen-containing precursor to form atomic oxygen. The substrate is heated in the presence of these reactants for a period of time sufficient to enable the atomic oxygen to react with the surface atoms of the wafer and thus form the coherent uniform oxide layer. The temperature of about 750.degree. C. is sufficiently low to avoid adverse effects, such as dopant migration, on the wafer. In a preferred embodiment of the present invention, a coherent, uniform layer of silicon dioxide is formed on the surface of a silicon wafer.
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Rosencher et al., "An .sup.18 O Study of Thermal Oxidation of Silicon in Oxygen" App. Phys. Lett. 34, (4), Feb. 15, 1979, pp. 254-256.
Chew Remedios K.
Gorre Luisa E.
Pastor Ricardo C.
Bethurum W. J.
Hughes Aircraft Company
Karambelas A. W.
Lachman Mary E.
Smith John D.
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