Process for low temperature semiconductor fabrication

Details Process for low temperature semiconductor fabrication Process for low temperature semiconductor fabrication

1999-07-19

2000-06-27

Ramsey, Kenneth J.

Electric lamp or space discharge component or device manufacturi

Process

Electrode making

438 20, H01J 902

Patent

active

060800321

ABSTRACT:
A method for forming semiconductor devices without utilizing high temperature processing involves forming a surface porous silicon layer. The surface porous silicon layer may be removed by selective etching or it may be oxidized and then removed by selective etching. In the case of a field emission display, the porous silicon formation process is sufficiently controllable that uniform emitters may be formed. Moreover, by maintaining the structure at a temperature below the temperature at which substantial diffusion of alkaline constituents occurs, soda-lime glass may be used as a substrate for making semiconductor devices.

REFERENCES:
patent: 5051134 (1991-09-01), Schnegg et al.
patent: 5192717 (1993-03-01), Kawakami et al.
patent: 5227699 (1993-07-01), Busta
patent: 5527200 (1996-06-01), Lee et al.
patent: 5923948 (1999-07-01), Cathey
patent: 5981303 (1999-11-01), Gilton
U.S. Patent Application Ser. No. 08/895,523 filed Jul. 17, 1997, inventor Terry L. Gilton, entitled "Method of Making Field Emitters with Porous Silicon".

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