Process for low temperature curing of sol-gel thin films

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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4273977, 501 12, B05D 306

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active

047042990

ABSTRACT:
A process for curing and densifying a sol-gel derived inorganic thin film at lower temperatures (between 10.degree. C. and 400.degree. C.) by applying the films to a substrate, drying the film at a low temperature, exposing the film to a low pressure plasma. The film may be an oxide (e.g. SiO.sub.2), nitride (e.g. Si.sub.3 N.sub.4), oxynitride (e.g. SiO.sub.x N.sub.y) or sulfide (e.g. GeS.sub.2).

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