Process for low pressure chemical vapor deposition of refractory

Details Process for low pressure chemical vapor deposition of refractory Process for low pressure chemical vapor deposition of refractory

1986-06-16

1988-02-23

Smith, John D.

Fishing, trapping, and vermin destroying

427 91, 427 99, 4272481, 4272551, 427 8, 29574, B05D 512, C23C 1600

Patent

active

047269618

ABSTRACT:
A process and apparatus for the low pressure, cold wall, chemical vapor deposition of refractory metals, such as tungsten on a silicon wafer. The silicon wafer is introduced into a loading lock wherein the pressure is reduced to subatmospheric pressure. The silicon wafer is transferred to a deposition chamber where it is heated to an elevated temperature. A refractory metal carbonyl vapor is introduced into the deposition chamber and dissociates to deposit a refractory metal on the silicon wafer. The wafer is transferred to an unloading lock where it is allowed to cool and is then removed.

REFERENCES:
patent: 2913357 (1959-11-01), Ostrofsky
patent: 3669724 (1972-06-01), Brand
patent: 4369031 (1983-01-01), Goldman
patent: 4392299 (1983-07-01), Shaw
patent: 4487787 (1984-11-01), Shioya
patent: 4619840 (1986-10-01), Goldman
Murosana et al., "Thin Film-", Vacuum, 31, No. 7, pp. 309-133, 1981.

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