Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
Reexamination Certificate
2006-03-28
2006-03-28
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
C117S008000, C117S009000, C117S041000, C117S042000, C117S043000
Reexamination Certificate
active
07018468
ABSTRACT:
A process of lateral crystallization is provided for increasing the lateral growth length (LGL). A localized region of the substrate is heated for a short period of time. While the localized region of the substrate is still heated, a silicon film overlying the substrate is irradiated to anneal the silicon film to crystallize a portion of the silicon film in thermal contact with the heated substrate region. A CO2laser may be used as a heat source to heat the substrate, while a UV laser or a visible spectrum laser is used to irradiate and crystallize the film.
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Proceeding entitled, “CO2 Laser Crystallization of Silicon on Bulk Fused Silica”, by Hawkins et al., published in Material Research Society Symposia Proceedings vol. 4, pp 529-534, 1982.
Crowder Mark A.
Sposili Robert S.
Voutsas Apostolos T.
Kunemund Robert
Law Office of Gerald Maliszewski
Maliszewski Gerald
Sharp Laboratories of America Inc.
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