Process for levelling film surfaces and products thereof

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material

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437228, 437233, 437234, 437225, 148DIG51, 156625, 156662, 136258, 136264, 136265, H01L 2100, H01L 2102, H01L 2130, H01L 21304

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049098632

ABSTRACT:
Semiconductor films and photovoltaic devices prepared therefrom are provided wherein the semiconductor films have a specular surface with a texture less than about 0.25 micron greater than the average planar film surface and wherein the semiconductor films are surface modified by exposing the surface to an aqueous solution of bromine containing an acid or salt and continuing such exposure for a time sufficient to etch the surface.

REFERENCES:
patent: 4536607 (1985-08-01), Wiesman
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L. L. Kazmerski, O. Jamjoun, P. J. Ireland, S. K. Deb, R. A. Mickelsen, W. Chen; "Initial Oxidation of CuInSe.sub.2 " J. Vac. Sci. Technol., 19 (1981).
R. R. Arya, T. Warminski, R. Beaulieu, M. Kwietniak, J. J. Loferski; "Photovoltaic & Structural Properties of CuInSe.sub.2 /CdS Solar Cells" Solar Energy Mtrls. 8 (1983) 471-481.
D. K. Rao, J. J. B. Prasad, D. Sridevi, K. V. Reddy, J. Sobhanadri; Properties of p-CuInSe.sub.2 /Al Schottky Devices (1985) K-153-K158.
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R. W. Birkmire, L. C. DiNetta, P. G. Lasswell, J. D. Meakin, J. E. Phillips, "High Efficiency CuInSe.sub.2 Based Heterojunction Solar Cells: Fabrication and Results" Solar Cells 16 (1986).
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H. Haupt, K. Hess; "Growth of Large CuInSe.sub.2 Single Crystals" Inst. Phys. Conf. S. N. 35, 5-12 (1977).
Yakushev, M., The Observ. of Near-Surface Deviat. from Stoich. in CuInSe.sub.2 Cryst. follow Chem. Etch., Sol. Stat. Commun., 65, pp. 1079-1083, 1988.
Cahen, D., X-Ray Photoelect. & Auger Electron Spectro. Anal. of Surface Treatments and Electrochem. Decompos. of CuInSe.sub.2 Photoelectrodes, J. Appl. Phys. 57, pp. 4761-4771, 1985.
Dagan, G., Select. Electrochem. Etching of P-CuInSe.sub.2, Materials Research Society, pp. 133-138, 1987.
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