Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material
Patent
1988-07-13
1990-03-20
Hearn, Brian E.
Metal treatment
Barrier layer stock material, p-n type
With contiguous layers of different semiconductive material
437228, 437233, 437234, 437225, 148DIG51, 156625, 156662, 136258, 136264, 136265, H01L 2100, H01L 2102, H01L 2130, H01L 21304
Patent
active
049098632
ABSTRACT:
Semiconductor films and photovoltaic devices prepared therefrom are provided wherein the semiconductor films have a specular surface with a texture less than about 0.25 micron greater than the average planar film surface and wherein the semiconductor films are surface modified by exposing the surface to an aqueous solution of bromine containing an acid or salt and continuing such exposure for a time sufficient to etch the surface.
REFERENCES:
patent: 4536607 (1985-08-01), Wiesman
S. Wagner, J. L. Shay, P. Migliorato, H. M. Kasper; "CuInSe.sub.2 /Cds Heterojunction Photovoltaic Detectors," Appl. Phys. Letters, 25, 434-435 (1974).
B. Tell, M. Bridgenbaugh; "Photovoltaic Properties and Junction Formation of CuInSe.sub.2 ", Jrnl. of Applied Physics, 48, 2477-2480 (1977).
L. L. Kazmerski, O. Jamjoun, P. J. Ireland, S. K. Deb, R. A. Mickelsen, W. Chen; "Initial Oxidation of CuInSe.sub.2 " J. Vac. Sci. Technol., 19 (1981).
R. R. Arya, T. Warminski, R. Beaulieu, M. Kwietniak, J. J. Loferski; "Photovoltaic & Structural Properties of CuInSe.sub.2 /CdS Solar Cells" Solar Energy Mtrls. 8 (1983) 471-481.
D. K. Rao, J. J. B. Prasad, D. Sridevi, K. V. Reddy, J. Sobhanadri; Properties of p-CuInSe.sub.2 /Al Schottky Devices (1985) K-153-K158.
W. Shen, W. Siripala, M. Tomkiewicz: "Electrolyte Electroreflectance Study of Surface Optimization of n-CuInSe.sub.2 in Photoelectrochemical Solar Cells" J. Electrochem. Soc. (1986) 107-111.
N. Yalcin, I. S. Al-Saffar, R. D. Tomlinson; "Space-charge-limited current effects in n-type CuInSe.sub.2 /Au Schottky diodes" J. Appl. Phys. 52 (1981) 5857-5858.
R. W. Birkmire, L. C. DiNetta, P. G. Lasswell, J. D. Meakin, J. E. Phillips, "High Efficiency CuInSe.sub.2 Based Heterojunction Solar Cells: Fabrication and Results" Solar Cells 16 (1986).
Y. Mirovsky, D. Cahen; "n-CuInSe.sub.2 /polysulfide photoelectrochemical Solar Cells" Applied Physics Ltrs., vol. 40, No. 8, 727-730 (1982).
D. Cahen, G. Dagan, Y. Mirovsky; "Termary Chalcogenide-Based Photoelectrochemical Cells" J. Electrochem. Soc. (1985) 1062-1070.
H. Haupt, K. Hess; "Growth of Large CuInSe.sub.2 Single Crystals" Inst. Phys. Conf. S. N. 35, 5-12 (1977).
Yakushev, M., The Observ. of Near-Surface Deviat. from Stoich. in CuInSe.sub.2 Cryst. follow Chem. Etch., Sol. Stat. Commun., 65, pp. 1079-1083, 1988.
Cahen, D., X-Ray Photoelect. & Auger Electron Spectro. Anal. of Surface Treatments and Electrochem. Decompos. of CuInSe.sub.2 Photoelectrodes, J. Appl. Phys. 57, pp. 4761-4771, 1985.
Dagan, G., Select. Electrochem. Etching of P-CuInSe.sub.2, Materials Research Society, pp. 133-138, 1987.
Birkmire, R., Specular CuInSe.sub.2 Films for Solar Cells, Appl. Phys. Lett. 53(2), 1988.
Birkmire Robert W.
McCandless Brian E.
Everhart B.
Hearn Brian E.
Ryan James H.
University of Delaware
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