Process for lapping wafer and method for processing backside...

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate

Reexamination Certificate

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C438S977000, C438S692000

Reexamination Certificate

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06864154

ABSTRACT:
A process of lapping a wafer includes the steps of relieving adhesive stress of an ultraviolet tap attached to a first side of the wafer by irradiation of ultraviolet light, maintaining a lapping jig at a usable temperature of the ultraviolet tape to cause a binder applied to the lapping jig to be melted, bonding the first side of the wafer to the lapping jig, and lapping the wafer.

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patent: 5840614 (1998-11-01), Sim et al.
patent: 5893746 (1999-04-01), Usami et al.
patent: 5981391 (1999-11-01), Yamada
patent: 6030485 (2000-02-01), Yamada
patent: 6162701 (2000-12-01), Usami et al.
patent: 6462415 (2002-10-01), Ishiguri et al.
patent: 6506681 (2003-01-01), Grigg et al.
patent: 10-50642 (1998-02-01), None
patent: 2000-277469 (2000-10-01), None

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