Process for joining molded silicon nitride parts

Details Process for joining molded silicon nitride parts Process for joining molded silicon nitride parts

1987-10-30

1990-04-17

Derrington, James

Plastic and nonmetallic article shaping or treating: processes

Including step of generating heat by friction

264 62, 264332, C04B 3558

Patent

active

049178431

ABSTRACT:
For joining shaped bodies of silicon nitride together, silicon nitride surfaces to be joined are first polished and then put into an apparatus for applying sputtered layers where they are first cleaned by ion bombardment in argon, followed immediately by sputtering with silicon in a nitrogen atmosphere such that a layer is deposited having a nitrogen content exceeding the Si.sub.3 N.sub.4 stoichiometric ratio. This readily provides a layer of the composition Si.sub.3 N.sub.5.5. A complementary nitrogen deficient layer is also provided in the joint before hot pressing, either in the form of a silicon layer that goes between the nitrogen-rich silicon nitride layers or in the form of a nitrogen-deficient silicon nitride layer sputtered onto a polished silicon nitride surface at relatively low nitrogen pressure. The parts are isostatically hot pressed together at 1500.degree. to 1750.degree. C. in a nitrogen atmosphere. The layers which are usually thinner than 1 .mu.m interact, with the disappearance of excess nitrogen and silicon, so that once the joint is produced all traces of jointure tend to disappear. The presence of a small amount of Y.sub.2 O.sub.3 at the joint has a favorable effect.

REFERENCES:
Johnson et al, Proc. 2nd Int. Conf. on Ceramic, Glass & Metal Joints, Mar. 7-29, 1985, Deutschen Keramischen Gesellschaft, pp. 109-125.
Gyarmati et al, Proc. 2nd, Int. Symp. on Ceramic Materials & Components for Engines, Apr. 14-17, 1986, Lubeck-Travemuade, pp. 449-457.
Perry et al, Proc. 8th Int. Conf. on Chemical Vapor Deposition, 1981, Electrochemical Society, Pennington, N.J., pp. 475-488.
Laers et al, Prod. 8th Int. Conf. on Chemical Vapor Deposition, 1981, Electrochemical Society, Pennington, N.J. pp. 723-736.
Qiu et al, Composition and Properties of Si.sub.3 N.sub.4 Films Produced by Reactive RP. Magnetron Sputtering, Thin Solid Films 1987, pp. 223-233.

Affiliated with

Also associated with

Rating

Process for joining molded silicon nitride parts does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for joining molded silicon nitride parts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for joining molded silicon nitride parts will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1051052