Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2005-04-12
2005-04-12
Everhart, Caridad (Department: 2825)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S032000, C438S042000, C257S095000, C372S096000
Reexamination Certificate
active
06878565
ABSTRACT:
A distributed feedback (DFB) laser is constructed such that a laser stripe has a minimum tilt angle with respect to a cleaved facet in order to reduce the facet reflectivity. A method for improving the yield of distributed feedback lasers is also provided. The method includes selecting a tilt angle and antireflection coating to achieve a desired effective facet reflectivity. In one embodiment, a range of tilt angles and facet coatings is tested to determine a statistical correlation between yield of a desired laser characteristic, such as side mode suppression ratio, and tilt angle.
REFERENCES:
patent: 20020131465 (2002-09-01), Lo et al.
patent: 20030169787 (2003-09-01), Vurgaftman et al.
“Reflection Loss of Laser Mode From Tilted End Mirror,” by Dietrich Marcuse, IEEE Journal of Lightwave Technology, vol. 7, No. 2, Feb. 1989.
Everhart Caridad
Finisar Corporation
Workman Nydegger
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