Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1985-02-27
1987-04-28
Saba, William G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576E, 29576T, 148 15, 148189, 148191, 148DIG3, 148DIG117, 148DIG150, 156612, 156613, 156614, 156DIG64, 156DIG73, 156DIG95, 357 4, 357 49, H01L 2120, H01L 2176
Patent
active
046611762
ABSTRACT:
The present invention accomplishes the thermal oxidation of the silicon side of the interface present in epitaxial silicon films grown on yttria-stabilized cubic zirconia, <Si>/<YSZ>, to form a dual-layer structure of <Si>/amorphous SiO.sub.2 /<YSZ>. The SiO.sub.2 films are formed in either dry oxygen (at 1100.degree. C.) or in pyrogenic steam (at 925.degree. C.) by the rapid diffusion of oxidizing species through a 425 .mu.m thick cubic zirconia substrate. For instance, a 0.17 .mu.m thick SiO.sub.2 layer is obtained after 100 min in pyrogenic steam at 925.degree. C. This relatively easy transport of oxidants is unique to YSZ and other insulators which are also superionic oxygen conductors, and cannot be achieved in other existing Si/insulator systems, such as silicon-on-sapphire.
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L. M. Mercandelli et al., "Epitaxial Silicon on Ytria-Stabilized Cubic Zirconia (YSZ) and Subsequent Oxidation of the Si/YSZ Interface," Material Research Soc. Conference, Boston, 1984 (Nov.) paper #D.3.12.
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Collier Stanton E.
O'Brien William J.
Saba William G.
Singer Donald J.
The United States of America as represented by the Secretary of
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