Process for improving nitride deposition on a semiconductor wafe

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427 86, 427 95, H01L 21318

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active

044289758

ABSTRACT:
In a process for depositing nitride on semiconductor wafers in a tube, streaks can develop on the wafers. The streaks are eliminated by using a quartz tube which has an inside surface coated with polysilicon for the nitride deposition.

REFERENCES:
patent: 4279947 (1981-07-01), Goldman
patent: 4389967 (1983-06-01), Shimoda
Bronchard et al., "Method for Eliminating Contamination by Si.sub.3 N.sub.4 and/or SiO.sub.2 Particles in Chemical Deposition Equipment", IBM TDB, vol. 22, No. 5, Oct. 1979, p. 1886.

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