Process for improving nitride deposition on a semiconductor wafe

Details Process for improving nitride deposition on a semiconductor wafe Process for improving nitride deposition on a semiconductor wafe

1983-01-28

1984-01-31

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 86, 427 95, H01L 21318

Patent

active

044289758

ABSTRACT:
In a process for depositing nitride on semiconductor wafers in a tube, streaks can develop on the wafers. The streaks are eliminated by using a quartz tube which has an inside surface coated with polysilicon for the nitride deposition.

REFERENCES:
patent: 4279947 (1981-07-01), Goldman
patent: 4389967 (1983-06-01), Shimoda
Bronchard et al., "Method for Eliminating Contamination by Si.sub.3 N.sub.4 and/or SiO.sub.2 Particles in Chemical Deposition Equipment", IBM TDB, vol. 22, No. 5, Oct. 1979, p. 1886.

Affiliated with

Also associated with

Rating

Process for improving nitride deposition on a semiconductor wafe does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for improving nitride deposition on a semiconductor wafe, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for improving nitride deposition on a semiconductor wafe will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2345508