Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-04-12
1977-12-13
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148174, 156610, 156613, 156614, H01L 21205, H01L 2118
Patent
active
040627063
ABSTRACT:
A method of forming and epitaxially depositing III-V compound crystals which comprises interacting two gaseous mixtures in the absence of oxidizing gas and hydrogen carrier gas, one mixture being formed by contacting a stream of a mixture of an inert carrier gas and a hydrogen halide with a Group III element, the second mixture being formed by contacting a stream of an inert carrier gas with a Group V element or a volatile Group V compound.
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patent: 3673011 (1972-06-01), Strull
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Taylor; R. C., "Epitaxial Deposition of GaAs in an Argon Atmosphere", J. Electrochem. Soc., vol. 114, No. 4, Apr. 1967, pp. 410-412.
Burd; J. W., "Multi-Wafer Growth System -- GaAs and GaAs.sub.1-x P.sub.x ", Trans. Metallurgical Soc. of AIME, vol. 245, Mar. 1969, pp. 571-576.
Effer et al., "Preparation of InAs, InP, GaAs -- Methods", J. Electrochem. Soc., vol. 107, No. 3, 1960, pp. 252-253.
Shaw et al., "Gallium Arsenide Epitaxial Technology", 1966 Symposium on GaAs, paper No. 2, pp. 10-15.
Rutledge L. Dewayne
Saba W. G.
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