Process for II-VI compound epitaxy

Details Process for II-VI compound epitaxy Process for II-VI compound epitaxy

1988-10-05

1990-04-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437119, 437238, 437 2, 437 3, 437 5, 437129, 437130, 437133, 437126, 437127, 118 70, 148DIG101, 148DIG118, 2041921, 20419223, H01L 2120, H01L 21203, H01L 21205, H01L 21208

Patent

active

049200674

ABSTRACT:
Hg.sub.1-x Cd.sub.x Te, Hg.sub.1-x Zn.sub.x Te and other related II-VI ternary semiconductor compounds are important strategic materials for photovoltaic infrared detector applications. Liquid phase epitaxy employing a tellurium-rich molten nonstoichiometric solution is an accepted technology for thin film epitaxial crystal growth.
This present invention describes a crystal growth process employing specially encapsulated graphite components which directly facilitate a high volume, high quality large area epitaxial layer production.

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patent: 4661176 (1987-04-01), Manasevit
patent: 4849373 (1989-07-01), Knight et al.

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