Chemistry of inorganic compounds – Silicon or compound thereof – Oxygen containing
Patent
1990-01-31
1992-01-28
Kunemund, Robert
Chemistry of inorganic compounds
Silicon or compound thereof
Oxygen containing
423332, 423334, C01B 3332
Patent
active
050842625
ABSTRACT:
The direct hydrothermal production of high purity potassium silicate solutions having a high SiO.sub.2 : K.sub.2 O molar ratio by reaction of a silicon dioxide source with aqueous potassium hydroxide solutions is made possible by using a silicon dioxide source that contains a sufficient fraction of cristobalite phase, or by conditioning other crystalline forms of silicon dioxide by heating at or above 1100.degree. C., but below the melting point of silica, before the hydrothermal treatment. Preferably the potassium hydroxide solution has a concentration range of 10 to 40% by weight, and the reaction is carried out in a closed pressure reactor at temperatures of 150.degree. to 300.degree. C. and under saturated steam pressures corresponding to those temperatures.
REFERENCES:
patent: 4520001 (1985-05-01), Metzger
patent: 4770866 (1988-09-01), Christophliemk et al.
Anorganische Technologie II. 4. 1983, pp. 54-63, no translation.
Ullmanns Encylopedia Chemie, Band 21, 1982, pp. 409-412, no translation.
Ullmanns Encylopedia Chemia, Band 21, 1982, pp. 439-442, no translation.
Hoff Alfred
Novotny Rudolf
Schuertz Jost
Henkel Kommanditgesellschaft auf Aktien
Horton Ken
Jaeschke Wayne C.
Kunemund Robert
Szoke Ernest G.
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