Process for homogenizing compound semiconductor single crystal i

Details Process for homogenizing compound semiconductor single crystal i Process for homogenizing compound semiconductor single crystal i

1989-05-23

1992-03-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437236, 437237, 437247, 437248, H01L 2102

Patent

active

050932845

ABSTRACT:
Properties of a compound semiconductor single crystal (e.g. GaAs single crystal) can be homogenized by subjecting the single crystal covered with a metal oxide powder (e.g. Ga.sub.2 O.sub.3 powder) to a heat treatment.

REFERENCES:
patent: 3984263 (1976-10-01), Asao et al.
patent: 4174982 (1979-11-01), Immorlica, Jr.
patent: 4194927 (1980-03-01), Takagi et al.
patent: 4357180 (1982-11-01), Molnar
patent: 4595423 (1986-06-01), Miyazawa et al.

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