Process for growing single crystal

Details Process for growing single crystal Process for growing single crystal

1996-08-06

1999-04-20

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117 88, 117105, 117951, C30B 2936

Patent

active

058955267

ABSTRACT:
A process for growing a single crystal comprises providing a single crystal substrate acting as a seed crystal above a source material in a container, heating the source material in an inert gas atmosphere in the container to form a sublimed source material, and discharging the sublimed source material from the container through a port above the single crystal substrate, to cause the sublimed source material to flow along and in parallel with a surface of the single crystal substrate, and grow a single crystal on the surface of the single crystal substrate.

REFERENCES:
patent: Re34861 (1995-02-01), Davis et al.
patent: 5433167 (1995-07-01), Furukawa et al.
patent: 5441011 (1995-08-01), Takahaski et al.

Affiliated with

Also associated with

Rating

Process for growing single crystal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for growing single crystal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for growing single crystal will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2245788