Process for growing silicon single crystal and process for...

Details Process for growing silicon single crystal and process for... Process for growing silicon single crystal and process for...

2008-01-22

2008-01-22

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S013000, C117S019000

Reexamination Certificate

active

07320731

ABSTRACT:
A process for growing a silicon single crystal which is capable of growing a silicon single crystal at a pulling rate which is not lower than the critical pulling rate at which an OSF-generating region will be generated is provided. Such a process for growing a silicon single crystal is characterized by using an atmospheric gas for growing a single crystal which is a hydrogen-containing gas which contains a hydrogen-containing substance, and pulling the silicon single crystal at a pulling rate ranging from a value with which the ratio (a/b) of the diameter (b) of the silicon single crystal and the outer diameter (a) of a ring which consists of the OSF-generating region in the radial direction of the silicon single crystal is not higher than 0.77 to another value with which the OSF-generating region disappears at the center part of the crystal.

REFERENCES:
patent: 5954873 (1999-09-01), Hourai et al.
patent: 6245430 (2001-06-01), Hourai et al.
patent: 6569237 (2003-05-01), Tanaka et al.
patent: 6843847 (2005-01-01), Iida et al.
patent: 2006/0156969 (2006-07-01), Hourai et al.

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