Process for growing silicon-on-insulator wafers using lateral ep

Details Process for growing silicon-on-insulator wafers using lateral ep Process for growing silicon-on-insulator wafers using lateral ep

1987-06-15

1988-07-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 83, 437915, 437908, 437 62, 148DIG26, 148DIG48, 148DIG152, 148DIG154, 156610, 156613, 156644, 156662, H01L 2176, H01L 21263

Patent

active

047600365

ABSTRACT:
A process for growing silicon on insulator in which complete isolation of the grown silicon of the substrate silicon by an intermediate oxide layer is obtained. A first epitaxial lateral overgrowth technique is used to grow a continuous layer of silicon through seed holes in a patterned oxide layer overlying the silicon substrate. Then the silicon layer is etched to expose the seed holes which are then oxidized to make the oxide layer aperture-free. This is followed by a second epitaxial lateral overgrowth step to replace the silicon etched in the silicon layer to make the layer substantially planar.

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