Process for growing silicon epitaxial layer

Details Process for growing silicon epitaxial layer Process for growing silicon epitaxial layer

1993-12-09

1995-06-06

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 84, 117 89, 118724, C30B 2502

Patent

active

054212880

ABSTRACT:
A process for growing a silicon epitaxial layer on the main surface of a silicon substrate wafer using an apparatus for growing a silicon epitaxial layer is disclosed. The apparatus comprises a central injector passing a flow of a reactive gas past a central part of a horizontal chamber, peripheral injectors passing peripheral flows of the reactive gas past a peripheral part of the chamber, a first controller controlling the mass flows of at least one of the silicon source, the dopant and hydrogen of the reactive gas fed by the central injector, and a second controller controlling the mass flows of at least one of the silicon source, the dopant and hydrogen fed by the peripheral injectors independently of the first controller. The process comprises control steps independently controlling the mass flows of the reactive gas by the first contoller and the second controller.

REFERENCES:
patent: 3854443 (1974-12-01), Baerg
patent: 4062706 (1977-12-01), Ruehrwein
patent: 4421786 (1983-12-01), Mahajan et al.
patent: 5134965 (1992-08-01), Tokuda et al.
patent: 5227330 (1993-07-01), Agnello et al.
F. Mieno et al., "Low Temperature Silicon Epitaxy Using Si.sub.2 H.sub.6 ", Journal of the Electrochemical Society, vol. 134, No. 9, pp. 2320-2323.

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