Process for growing silicon carbide whiskers by undercooling

Details Process for growing silicon carbide whiskers by undercooling Process for growing silicon carbide whiskers by undercooling

1986-03-12

1987-10-27

Doll, John

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

423345, C01B 3186

Patent

active

047029013

ABSTRACT:
A method of growing silicon carbide whiskers, especially in the .beta. form, using a heating schedule wherein the temperature of the atmosphere in the growth zone of a furnace is first heated to or beyond the growth temperature and then is cooled to or below the growth temperature to induce nucleation of whiskers at catalyst sites at a desired point in time which results in the selection.

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