Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1994-04-18
1995-01-10
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117953, 117 88, C30B 2502
Patent
active
053797205
ABSTRACT:
A process for growing a semiconductor crystal, comprising growing a group III-V compound semiconductor containing P as a group V element by an organometal vapor phase epitaxy by using tertiary butyl phosphine (TBP) as a source of P constituting a grown layer and doping the semiconductor with a dopant gas during a growth of the semiconductor. In this process, the source gas and dopant gas are fed under a condition satisfying a requirement represented by the following formula, to conduct a growth of the crystal: ##EQU1## wherein n is a carrier concentration of the growing semiconductor crystal, T is a temperature of the substrate and an atmosphere in the vicinity of the substrate, P.sub.TBP.sup.0 is an equilibrium vapor pressure of TBP or a decomposition product thereof, P.sub.D.sup.0 is an equilibrium vapor pressure of a dopant or a decomposition product thereof, P.sub.0 is a total pressure, f.sub.0 is a total flow rate, and f.sub.TBP is a flow rate of TBP.
REFERENCES:
Takeda et al, "Characterization of InP Grown by CMVPE Using Tertiery-butylphosphine for the Phosphorous Source", Jap. Jour. of Applied Physics, vol. 29, No. 1 Jan. 1990 pp. 11-18.
Pan et al, "InAlAs/InP Modulation Doped Heterostructure by Atmospheric Pressure . . . ", Applied Physics Letters 61(21) Nov. 23, 1992 pp. 2572-2574.
M. Sugo et al.: "n.sup.+ -p-p.sup.+ Structure InP Solar Cells Grown by Organometallic Vapor-Phase Epitaxy," IEEE Transactions On Electron Devices, vol. ED-34, No. 4, Apr. 1987, New York, N.Y., pp. 772-777.
B. Rose et al.: "Si Incorporation in InP using a Disilane Source in Metalorganic Vapour Phase Epitaxy at Atmospheric Pressure," Journal Of Crystal Growth, vol. 94, No. 3, Mar. 1989, Amsterdam, NL, pp. 762-766.
U. Sudarsan et al.: "Ultraviolet laser-induced low-temperature epitaxy of GaP," Applied Physics Letters, vol. 55, No. 8, 21 Aug. 1989, New York, N.Y., pp. 739-740.
R. Huang et al.: "High quality Fe-doped semi-insulating InP epitaxial layers grown by low-pressure organometallic vapor phase epitaxy using tertiarybutylphosphine," Applied Physics Letters, vol. 58, No. 2, 14 Jan. 1991, New York, N.Y., pp. 170-172.
Fujitsu Limited
Kunemund Robert
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