Process for growing multielement compound single crystal

Details Process for growing multielement compound single crystal Process for growing multielement compound single crystal

1995-03-17

1995-12-05

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

117 78, 117 81, 117 83, 117941, 117944, C30B 1108

Patent

active

054719380

ABSTRACT:
A process for growing a multielement compound single crystal, includes the steps of placing a crucible holding a raw multielement compound of a predetermined set of composition ratios Y in a vertical crystal growing furnace having a heater, melting the raw multielement compound held in the crucible with the heater to produce a melt of the raw multielement compound in the crucible, controlling the output of the heater to grow a multielement compound single crystal of a predetermined set of composition ratios X from the melt so that the melt is solidified successively upwards from part of the melt in contact with the bottom of the crucible, and feeding to the melt as a solute at least one element of the raw multielement compound from above the level of the melt in the crucible so as to maintain the predetermined set of composition ratios X of the solute during growth of the multielement compound single crystal. The process can keep constant the composition of the grown multielement compound single crystal. The process is applicable to the growth of multielement compound semiconductor single crystals and multielement compound oxide single crystals.

REFERENCES:
patent: 4931133 (1990-06-01), Gualtieri et al.
patent: 5322588 (1994-06-01), Habu et al.
Paper Presented at 6th Conf. on Semi-insulating III-V Materials, Canada, 1990 Chapt. 3, pp. 199-204, 1990, W. A. Bonner, et al.
Research Report of Sizuoka Univ., Elec. Eng. Inst., vol. 20, pp. 193-197, 1985, Tokuzo Sukegawa, et al.
Journal of Crystal Growth, 112 (1991) 33 38, LEC Growth of InGaAs . . . Toshihiro Kusunoki, et al.-Dec. 31, 1990.
Journal of Crystal Growth, 113 (1991) 485-490, Growth of ternary In.sub.x Ga.sub.1 . . . Kazuo Nakajima, et al.-Nov. 15, 1990.

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