Process for growing multielement compound single crystal

Details Process for growing multielement compound single crystal Process for growing multielement compound single crystal

1994-02-10

1995-10-03

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 83, 117937, 117223, C30B 1108

Patent

active

054543460

ABSTRACT:
A process for growing a multielement compound single crystal, includes the steps of placing a crucible holding a raw multielement compound of a predetermined set of composition ratios Y in a vertical crystal growing furnace having a heater, melting the raw multielement compound held in the crucible with the heater to produce a melt of the raw multielement compound in the crucible, controlling the output of the heater to grow a multielement compound single crystal of a predetermined set of composition ratios X from the melt so that the melt is solidified successively upwards from part of the melt in contact with the bottom of the crucible, and feeding to the melt as a solute at least one element of the raw multielement compound from above the level of the melt in the crucible so as to maintain the predetermined set of composition ratios X of the solute during growth of the multielement compound single crystal. The process can keep constant the composition of the grown multielement compound single crystal. The process is applicable to the growth of multielement compound semiconductor single crystals and multielement compound oxide single crystals.

REFERENCES:
Paper Presented at 6th Conf. on Semi-insulating III-V Materials, Canada, 1990 Chapt. 3, pp. 199-204, 1990. W. A. Bonner, et al.
"Growth of ternary In.sub.x Ga.sub.1-x As bulk crystals with a uniform composition through supply of GaAs"; Nakajima et al; J. Cryst. Growth 113(1991) pp. 485-490.
Research Report of Sizuoka Univ., Elec. Eng. Inst., vol. 20, pp. 193-197, 1985, Tokuzo Sugegawa, et al.
Journal of Crystal Growth 112 (1991) 33 38 LEC growth of InGaAs . . . Toshihiro Kusunoki, et al.-Dec. 31, 1990.

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