Process for growing indium phosphide of controlled purity

Details Process for growing indium phosphide of controlled purity Process for growing indium phosphide of controlled purity

1979-07-11

1980-12-09

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 148175, H01L 21208

Patent

active

042382521

ABSTRACT:
The specification discloses a process for growing crystals of a Group III-V material having controlled and high purity. The crystal is grown in the presence of hydrogen containing a predetermined amount of water vapor and the water vapor suppresses the concentration of silicon impurities from the reaction chamber, the associated tubing, and/or the starting materials, which are incorporated in the grown crystal. The crystal growth process may be either an epitaxial process or a bulk process. In one embodiment of the invention, the material grown is indium phosphide. In another embodiment of the invention, the process described above is used to grow a series of epitaxial layers of a Group III-V material with each layer having different predetermined impurity concentrations, to form a Gunn diode device.

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patent: 4035205 (1977-07-01), Lebailly et al.
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Weiner, M. E., J. Electrochem. Soc. vol. 119, No. 4, Apr. 1972, pp. 496-504.

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