Process for growing III-V compound semiconductors on sapphire us

Details Process for growing III-V compound semiconductors on sapphire us Process for growing III-V compound semiconductors on sapphire us

Filed on

1988-03-16

Date issued

1989-08-08

Examiner

Hearn, Brian E.

Patent Class

Fishing, trapping, and vermin destroying

Other Related Categories

148DIG25, 148DIG72, 148DIG97, 148DIG110, 148DIG113, 156613, 357 17, 437 84, 437111, 437127, 437133, 437905, 437976, H01L 21205, H01L 2120

Type

Patent

Status

active

Patent number

048552496

Description

ABSTRACT:
In organometallic vapor phase hetero-epitaxial processes for growing Al.sub.x Ga.sub.1-x N films on a sapphire substrate, the substrate is subjected to a preheat treatment of brief duration, such as less than 2 minutes, at relatively low temperatures in an atmosphere comprising Al-containing organometallic compound, NH.sub.3 and H.sub.2 gases, prior to the hetero epitaxial growth of Al.sub.x Ga.sub.1-x N films. Thus, single crystalline Al.sub.x Ga.sub.1-x N layers of high uniformity and high quality having smooth, flat surfaces are provided. Multi-layers grown according to the process of the invention are free from cracks and have preferable UV or blue light emission properties.

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G. D. O'Clock, Jr. et al. "Acoustic Surface Wave Properties . . . of Aluminum Nitride . . . ", J. Electrochem. Soc., vol. 81, 1975, pp. 55-56.
Mizuta et al., "Low Temperatures Growth of GaN and Aln on GaAs . . . ", Jap. J. Appl. Phys., vol. 25, No. 12, Dec. 1986, pp. L945-L948.
Matloubian et al., "MOCVD Epitaxial Growth of Single Crystal GaN, A/N and Al.sub.x Ga.sub.1-x N", J. of Elect. Mat., vol. 14, No. 5, 1985, pp. 633-644.
Morita et al., "Epitaxial Growth of Aluminum Nitride on Sapphire . . . ", Jap. J. Appl. Phys., vol. 20, No. 1, Jan. 1981, pp. 17-23.
Khan et al., "Properties and Ion Implanted Al.sub.x Ga.sub.1-x N Epitaxial Single Crystal Films . . . ", Appl. Phys. Lett., vol. 43, 1983, pp. 492-495.

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