Process for growing III-V compound semiconductors on sapphire us

Details Process for growing III-V compound semiconductors on sapphire us Process for growing III-V compound semiconductors on sapphire us

1988-03-16

1989-08-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG25, 148DIG72, 148DIG97, 148DIG110, 148DIG113, 156613, 357 17, 437 84, 437111, 437127, 437133, 437905, 437976, H01L 21205, H01L 2120

Patent

active

048552496

ABSTRACT:
In organometallic vapor phase hetero-epitaxial processes for growing Al.sub.x Ga.sub.1-x N films on a sapphire substrate, the substrate is subjected to a preheat treatment of brief duration, such as less than 2 minutes, at relatively low temperatures in an atmosphere comprising Al-containing organometallic compound, NH.sub.3 and H.sub.2 gases, prior to the hetero epitaxial growth of Al.sub.x Ga.sub.1-x N films. Thus, single crystalline Al.sub.x Ga.sub.1-x N layers of high uniformity and high quality having smooth, flat surfaces are provided. Multi-layers grown according to the process of the invention are free from cracks and have preferable UV or blue light emission properties.

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