Process for growing HgCdTe base and contact layer in one operati

Details Process for growing HgCdTe base and contact layer in one operati Process for growing HgCdTe base and contact layer in one operati

1994-05-24

1996-04-30

Nguyen, Nam

Fishing, trapping, and vermin destroying

437 5, 117957, H01L 2120

Patent

active

055125115

ABSTRACT:
A method for fabricating a two layer epitaxial structure by a liquid phase epitaxy (LPE) process, the structure being comprised of a Group II-VI semiconductor material. The method includes the steps of providing an LPE growth chamber that contains a molten Group II-VI semiconductor material 24, the molten Group II-VI semiconductor material having a first temperature (T.sub.1); growing, at the first temperature, a base layer (22) from the molten Group II-VI semiconductor material, the base layer being grown to have a first bandgap energy; employing a shutter mechanism (30) to isolate the base layer from the molten Group II-VI semiconductor material without removing the base layer from the growth chamber; reducing the first temperature of the molten Group II-VI semiconductor material to a second temperature (T.sub.2); and growing from the same molten Group II-VI semiconductor material a contact layer (32) upon a surface (22a) of the base layer, the contact layer being grown to have a second bandgap energy that is narrower than the first bandgap energy. The base layer is not removed from the growth chamber until after the growth of the contact layer, and is thus not required to be exposed to the atmosphere or to any other sources of contaminates.

REFERENCES:
patent: 3218203 (1965-11-01), Ruehrwein
patent: 4906325 (1990-03-01), Bernardi
patent: 5192695 (1993-03-01), Wang et al.
patent: 5241196 (1993-08-01), Huang et al.
patent: 5296384 (1994-03-01), Cockrum et al.
patent: 5391882 (1995-02-01), Rhiger
"Growth of Hg.sub.1-x Cd.sub.x Te Heterolayers by Slider LPE Using Sepearate Compensating Atmosphere of Mercury", Journal of Crystal Growth 113, pp. 520-526 (1991) by J. S. Chen et al.
T. Tung et al., "Liquid-Phase Epitaxy of Hg.sub.1-x Cd.sub.x Te from Hg Solution: A Route to Infrared Detector Structures", Materials for Infrared Detectors and Sources, Mater. Res. Socl. Symp. Proc. vol. 90 (Mater. Res. Soc., Pittsburgh, PA, 1987), p. 321.
T. Tung, "Infinite-Melt Vertical Liquid-Phase Epitaxy of HgCdTe from Hg Solution: Status and Prospects", J. Crystal Growth 86 (1988), pp. 161-172.

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