Process for growing gallium arsenide on silicon substrate

Details Process for growing gallium arsenide on silicon substrate Process for growing gallium arsenide on silicon substrate

1989-03-17

1990-01-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG25, 148DIG72, 148DIG97, 148DIG149, 148 384, 156610, 437107, 437 82, 437111, 437973, 437976, H01L 2120, H01L 21203

Patent

active

048973670

ABSTRACT:
A GaAs layer having a high crystallinity can be grown over an Si substrate without warping, by process for growing a GaAs layer on an Si substrate, said process comprising: forming a first GaAs layer in the amorphous state on the Si substrate at a first temperature, the first GaAs layer being formed with a thickness allowing formation of a single crystalline layer having a thickness of one to three monomolecular layers; heating the first GaAs layer to change the amorphous state of the first GaAs layer to a single crystalline state; forming an Si layer on the first GaAs layer at a second temperature higher than the first temperature, the Si layer being formed with a thickness having one to six monoatomic layers; forming a second GaAs layer in the amorphous state on the Si layer at the first temperature, the second GaAs layer being formed with a thickness substantially the same as the thickness of the first GaAs layer; heating the second GaAs layer the change the amorphous state of the second GaAs layer to a single crystalline state; and epitaxially growing a third GaAs layer on the second GaAs layer.

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