Process for growing GaAs epitaxial layers

Details Process for growing GaAs epitaxial layers Process for growing GaAs epitaxial layers

1988-12-09

1990-06-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG41, 148DIG65, 148DIG110, 156613, 437 96, 437107, 437971, H01L 2120

Patent

active

049353810

ABSTRACT:
Disclosed is a novel method to use arsine plus an alkylarsenic co-reagent to grow GaAs by OMCVD that not only allows one to take advantage of the lower toxicity and ease of decomposition of the alkylarsenic compounds, but also reduces the carbon contamination normally found in epilayers grown exclusively from these alkylarsines, and decreases the amount of arsine needed for growth of reasonably good quality GaAs epilayers.

REFERENCES:
patent: 4340617 (1982-07-01), Deutsch et al.
patent: 4524090 (1985-06-01), Bottka
patent: 4626448 (1986-12-01), Hays
patent: 4792467 (1988-12-01), Melas et al.
patent: 4814203 (1989-03-01), DePriest
Speckman et al., "Triethylarsenic and Arsine as Co-Reagents . . . " J. Crys. Growth, vol. 93, 1988, pp. 29-33.
Blaau W. et al., "Metalorganic Chemical-Vapour-Deposition Growth and Characterization of GaAs", Can. J. Phys., vol. 63, 1985, pp. 664-669.
Tromson et al., "Metal Organics Vapour Phase Epitaxy of GaAs . . . ", Rev. Phys. Appl., vol. 20, No. 8, Aug. 1985, pp. 569-574.
Speckman et al., "Alternatives to Arsine . . . Growth of GaAs Using Triethylarsenic", Appl. Phys. Lett., vol. 50, No. 11, Mar. 16, 1987, pp. 676-678.
Lum et al., "Investigation of Triethylarsenic as a Replacement for Arsine . . . ", Appl. Phys. Lett., vol. 52, No. 18, May 2, 1988, pp. 1475-1477.

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