Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1991-04-22
1996-10-29
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 33, 117912, C30B 1502
Patent
active
055693253
ABSTRACT:
A process for growing crystals at an enhanced rate comprising providing a dispersion of a fluid medium and seed crystals of a metal oxide, introducing feed material comprising a metal oxide into the dispersion and maintaining a uniform mixture of the seed crystals, the feed material and the fluid medium, the feed material having an average crystal size less than the average crystal size of the seed crystals, the feed material being added in an amount and at a rate whereby the seed crystals grow, the feed material providing a soluble nutrient species for deposition of the said crystal to effect crystal growth, the mixture of seed crystals and feed material being treated under conditions which stimulate crystal growth for a period of time sufficient to obtain a desired quantity of a product comprising at least one grown crystal having an average crystal size greater than the average crystal size of the seed crystal.
REFERENCES:
patent: 4117105 (1978-09-01), Hertzenberg et al.
patent: 4193768 (1980-03-01), Ohishi et al.
patent: 4797139 (1989-01-01), Bauer
patent: 4994253 (1991-02-01), Brown
Barclay David A.
Carradine William R.
Decker, Jr. Lewis B.
Lewis Duane J.
Breneman R. Bruce
CONDEA Vista Company
Garrett Felisa
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