Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat
Patent
1992-12-10
1994-06-07
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
Using heat
437 24, 437233, C30B 102
Patent
active
053186613
ABSTRACT:
A process for growing a crystalline thin film comprises forming a crystalline region comprising a single crystal-nucleus or crystal-grain at a predetermined position of an amorphous thin film, then implanting ions of at least one element constituting the amorphous thin film into a region other than the crystalline region and thereafter carrying out heat treatment to have the crystal-nucleus or crystal-grain grown along the plane direction of the amorphous thin film, thereby crystallizing the amorphous film by solid phase growth.
REFERENCES:
patent: 3900345 (1975-08-01), Lesk
patent: 4904611 (1990-02-01), Chiang et al.
R. Reif., et al. Electronics Letters, vol. 17, No. 17 (Aug. 20, 1981) pp. 586-588.
I.-W. Wu, et al., Journal of Applied Physics, vol. 65, No. 10 (May 15, 1989) pp. 4036-4039.
N. Yamauchi, et al., International Electron Devices Meeting, (Washington, D.C. Dec. 3-6, 1989) pp. 13.5.1-13.5.4.
Wu et al., "Retardation of Nucleation Rate for Grain Size Enhancement." J. Appl. Phys. 65 (10), May 15, 1989, pp. 4036-4039.
"Low-Temperature Process to Increase the Grain Size in Polysilicon Films." Electronics Letters, Aug. 20, 1981, vol. 17, No. 17, pp. 586-588.
Canon Kabushiki Kaisha
Kunemund Robert
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