Process for growing a film epitaxially upon a MGO surface and st

Details Process for growing a film epitaxially upon a MGO surface and st Process for growing a film epitaxially upon a MGO surface and st

1996-07-29

1998-12-08

Speer, Timothy

Stock material or miscellaneous articles

Composite

Of inorganic material

428701, 428702, B32B 1300

Patent

active

058466673

ABSTRACT:
A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

REFERENCES:
patent: 3655429 (1972-04-01), Deklerk
patent: 4996187 (1991-02-01), Chai
patent: 5030613 (1991-07-01), Chai
patent: 5221367 (1993-06-01), Chisholm
patent: 5225031 (1993-07-01), McKee
patent: 5323023 (1994-06-01), Fork
Hazen, Robert M., Scientific American, pp. 74-81, Jun. 1988.

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