Process for forming transistors using silicon ribbons as substra

Details Process for forming transistors using silicon ribbons as substra Process for forming transistors using silicon ribbons as substra

1981-06-30

1985-01-22

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576G, 29576T, 29580, 148 15, 148174, 148175, 156612, 156DIG73, 156DIG80, 156DIG88, 427 531, 427 86, 357 23, 357 59, H01G 700, H01L 1114

Patent

active

044943008

ABSTRACT:
A process improvement for enabling the development of low cost transistor devices, particularly MOS FETs, in annealed polysilicon formed on an insulator; the improvement resulting from the use of silicon ribbons as substrates.

REFERENCES:
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patent: 3585088 (1971-06-01), Schwuttke et al.
patent: 4059461 (1977-11-01), Fan et al.
patent: 4075055 (1978-02-01), Ciszek et al.
patent: 4116641 (1978-09-01), Ciszek
patent: 4198246 (1980-04-01), Wu
patent: 4272880 (1981-06-01), Pashley
Lee et al., "Thin Film Mosfet's . . . Polycrystalline Silicon", Appl. Phys. Letters, vol. 35 (2), Jul. 15, 1979, pp. 173-175.
Posa, J. G., "All-Silicon Devices Will Match SOS in Performance", Electronics Review, Nov. 22, 1979, pp. 39-40.
Kressel et al., "Epitaxial Silicon p-m Junctions . . . Ribbon", Appl. Phys. Lett., vol. 25, No. 4, Aug. 15, 1974, pp. 197-199.
Kamins et al., "Monolithic Integrated . . . Laser-Annealed Polysilicon", IEEE Trans. on Electron Devices, vol. Ed.-27, No. 1, Jan. 1980, pp. 290-293.

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