Process for forming thin oxide film

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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20419224, 505731, H01L 3924, C23C 1435

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active

052253937

ABSTRACT:
A process for forming a thin oxide film on an underlying surface adapted for film formation thereon according to a radio frequency magnetron sputtering method using an oxide target(s). The excitation frequency is a frequency which is higher than 13.56 MHz and which provides a negative target self-bias voltage permitting of film formation.

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