Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1992-01-10
1993-07-06
Weisstuch, Aaron
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
20419224, 505731, H01L 3924, C23C 1435
Patent
active
052253937
ABSTRACT:
A process for forming a thin oxide film on an underlying surface adapted for film formation thereon according to a radio frequency magnetron sputtering method using an oxide target(s). The excitation frequency is a frequency which is higher than 13.56 MHz and which provides a negative target self-bias voltage permitting of film formation.
REFERENCES:
patent: 4131533 (1978-12-01), Bialko et al.
T. Ohmi, Applied Physics Letters, vol. 52 No. 26 Jun. 27, 1988, pp. 2236-2238 "Room-Temperature copper metallization . . . ".
T. Ohmi, Applied Physics Letters, "In situ-surface cleaning for very low . . . ", vol. 53 No. 1 Jul. 4, 1988, pp. 45-47.
T. Ohmi, Applied Physics Letters, "Low temperature silicon epitaxy, . . . " vol. 53 No. 5, Aug. 1, 1988, pp. 364-366.
T. Ohmi, Applied Physics Letters, "Electrical characterization of epitaxial silicon", vol. 54 No. 3 Jan. 16, 1989, pp. 253-255.
T. Ohmi, Applied Physics Letters, "Crystal structure analysis of epitaxial silicon . . . " vol. 54 No. 6, Feb. 6, 1989, pp. 523-525.
T. Saito, Extended Abstracts of the 21st Conference on Solid State Devices and materials. Aug. 28-30, 1989, pp. 25-28.
H. Yamane, Applied Physics Letters, "Y-Ba-Cu-O superconducting films . . . ", vol. 53, No. 16, Oct. 17, 1988, pp. 1548-1550.
Vossen et al., "Thin Film Processes" Academic Press (N.Y. 1978) pp. 141, 164-165.
Shah et al., Am. Inst. Physics Conf. Proc., No. 165 (1987) pp. 50-57, "Growth of YBa.sub.2 Cu.sub.3 O.sub.7-x Thin Films by Sputtering".
Rossnagel and Cuomo, "Negative Ion Effects During Magnetron and Ion Beam Sputtering of YBa.sub.2 Cu.sub.3 O.sub.x " Ibid., pp. 106-113.
Takahashi et al. "In situ Preparation of Superconducting Y-Ba-Cu-O Films by Sequential Deposition using 40 MHz Magnetron Sputtering" Advances in Superconductivity II, T. Ishiguro et al. Editors Springer-Verlag (Tokyo 1990) pp. 793-796.
Yokosyu (The sectional meeting of "the physical society of Japan") 3'd part, 3 to 6 Oct., 1989, Abstract 6a-ZB-1 p. 372.
2nd International Symposium on Superconductivity, Japan, Delivered on Nov. 14, 1989, Abstract, p. 202.
Homma Norio
Kawamoto Shinji
Kondo Hideyuki
Morishita Tadataka
Takahashi Hiromi
International Superconductivity Technology Center
Manzo Edward D.
Mitsubishi Materials Corporation
OKI Electric Industry Co., Ltd.
The Chugoku Electric Power Co., Inc.
LandOfFree
Process for forming thin oxide film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for forming thin oxide film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming thin oxide film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1689637