Process for forming thin oxide film

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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20419224, 505731, H01L 3924, C23C 1434

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active

051068214

ABSTRACT:
A process for forming a thin oxide film on an underlying surface adapted for film formation thereon according to a radio frequency magnetron sputtering method using an oxide target(s). The excitation frequency is higher than 13.56 MHz and provides a lower negative target self-bias voltage permitting improved film formation.

REFERENCES:
patent: 4131533 (1978-12-01), Bialko et al.
Applied Physics Letters, vol. 52, No. 26, Jun. 27, 1988, T. Ohmi, "Room-Temperature Copper Metallization . . . ", pp. 2236-2238.
T. Ohmi, Applied Physics Letters, "In Situ-Surface Cleaning for Very Low . . . ", vol. 53, No. 1, Jul. 4, 1988, pp. 45-47.
T. Ohmi, Applied Physics Letters, "Low Temperature Silicon Epitaxy, . . . ", vol. 53, No. 5, Aug. 1, 1988, pp. 364-366.
T. Ohmi, Applied Physics Letters, "Electrical Characterization of Epitaxial Silicon", vol. 54, No. 3, Jan. 16, 1989, pp. 253-255.
T. Ohmi, Applied Physics Letters, "Crystal Structure Analysis of Epitaxial Silicon . . . ", vol. 54, No. 6, Feb. 6, 1989, pp. 523-525.
T. Saito, Extended Abstracts of the 21st Confernce on Solid State Devices and Materials, Japan, Aug. 28-30, 1989, pp. 25-28.
Yokosyu (The sectional meeting of "the Physical Society of Japan"), 3'd part, Oct. 3 to 6, 1989, Abstract 6a-ZB-1, p. 372.
2nd International Symposium on Superconductivity, Japan, delivered on Nov. 14, 1989, Abstract, p. 202.
T. Ishiguro et al., Editors, Advances in Superconductivity II, Springer-Verlag, published in 1990, pp. 793-796.
H. Yamane, Applied Physics Letters, "Y--Ba-Cu-O Superconducting Films . . . ", vol. 53, No. 16, Oct. 17, 1988, pp. 1548-1550.
J. L. Vossen et al., "Thin Film Processes", Academic Press, New York, (1978), pp. 141 and 164-165.
S. Shah et al., Am. Inst. Physics Conference Proceedings No. 165 (1987), pp. 50-57.
S. M. Rossnagel et al., Ibid, pp. 106-113.

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