Process for forming thin film having excellent insulating proper

Details Process for forming thin film having excellent insulating proper Process for forming thin film having excellent insulating proper

1995-01-18

1996-06-04

Robinson, Ellis P.

Stock material or miscellaneous articles

Composite

Of metal

428472, 428697, 428701, 428702, B32B 900

Patent

active

055231667

ABSTRACT:
A dense insulating thin film having a remarkably improved insulating property can be formed by a process comprising a first step of forming a first portion of an insulating thin film on a substrate by a sputtering process without exposing the substrate to a plasma or while irradiating the substrate with low energy particles and a second step of forming a second portion of the insulating thin film on the first portion while exposing the substrate to a plasma or while irradiating the substrate with high energy particles, thereby forming said insulating thin film on the substrate. The insulating property in terms of the dielectric breakdown voltage is 100 V or more as determined in a film thickness of 1 .mu.m or less and an area of 20 mm.sup.2.

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VLSI Technology, second edition, Ed. by S. M. Sze, McGraw-Hill, 1988, pp. 258-260.
Thin Solid Films, vol. 124, pp. 55-58, 1985, "Sputter Deposition of Dielectric Films . . . ", M. N. Khan.
CIP 85, 5th Internation Colloquium On Plasmas And Sputtering, 1985, pp. 285-288, "Depot Du Quartz En Pulverisation Cathodique", D. Hinson et al.
Applied Optics, vol. 23, No. 4, pp. 552-559, 1984, "Ion Assisted Deposition Of Optical Films . . . ", J. R. McNeil et al.
IBM Tech. Disc. Bul., vol. 27, No. 10A, 1985, pp. 5649-5650, "Process For Fabrication Of Sharply Defined Multilayer Thin Film".
European Seach Report, EP 91 10 8865.

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