Process for forming thin film

Details Process for forming thin film Process for forming thin film

1983-09-22

1985-01-22

Newsome, John H.

Coating processes

Electrical product produced

Welding electrode

427 541, 427 86, 427 93, 427 94, C23C 1700

Patent

active

044952180

ABSTRACT:
A thin film of a-Si, SiO.sub.2 or Si.sub.3 N.sub.4 can be formed on a substrate using a starting material gas containing at least a polysilane of the formula Si.sub.n H.sub.2n+2 (n=2, 3 or 4) by a chemical vapor deposition method with irradiation with light with high film forming rate at lower temperatures.

REFERENCES:
patent: 3200018 (1965-08-01), Grossman
patent: 3271180 (1966-09-01), White
patent: 4348428 (1982-09-01), Rockley et al.
patent: 4363828 (1982-12-01), Brodsky et al.

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