Process for forming the ridge structure of a self-aligned semico

Details Process for forming the ridge structure of a self-aligned semico Process for forming the ridge structure of a self-aligned semico

1991-03-15

1991-10-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437133, 437234, 437184, 437245, 148DIG100, H01L 2120, H01R 2120

Patent

active

050595520

ABSTRACT:
A process for forming the ridge structure of a self-aligned InP-system, double heterostructure (DH) laser, particularly useful for long wavelength devices as required for signal transmission systems includes a thin Si.sub.3 N.sub.4 layer (41) inserted between a photoresist mask (42) that defines the ridge structure, and a contact layer (35). Using a Si.sub.3 N.sub.4 layer (4) deposited at a high plasma excitation frequency (RF) for adhesion promotion, and a low frequency deposited (LF) Si.sub.3 N.sub.4 layer (43) for device embedding, provides for the etch selectively required in the process step that is used to expose the contact layer to ohmic contact metallization deposition.

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