Process for forming the oxide superconductor thin film and lamin

Details Process for forming the oxide superconductor thin film and lamin Process for forming the oxide superconductor thin film and lamin

1998-12-16

2000-06-13

Speer, Timothy M.

Stock material or miscellaneous articles

Composite

Of inorganic material

428701, 428702, 428930, 505237, 505238, B32B 900, B32B 1200

Patent

active

060747684

ABSTRACT:
A process for forming a laminate of 123-type copper oxide superconductor thin films having dissimilar crystal axis orientations, a laminate of 123-type thin copper oxide superconductor layers exhibiting excellent superconducting property, and wiring for Josephson junction. A c-axis oriented single crystalline thin film of an oxide superconductor having a Y:Ba:Cu atomic ratio of substantially 1:2:3 and a lattice constant of 11.60 angstroms.ltoreq.c.ltoreq.11.70 angstroms at a temperature of 20.degree. C. under an oxygen partial pressure of 160 Torr is formed on a single crystalline substrate, and an a-axis oriented single crystalline thin film of said oxide superconductor is formed on the above laminated film relying upon a sputter deposition method.

REFERENCES:
patent: 5413988 (1995-05-01), Hayashi et al.
patent: 5428005 (1995-06-01), Matsuura
Bourdillon et al., "High Temperature Superconductors, Processing and Science," Academic Press, Inc. (San Diego, CA) 1994, pp. 42-44.
Cheung et al., Applied Physics Letters 60(25) Jun. 1992, pp. 3180-3182.
Hsieh et al., Thin Solid Films, 216(1992), pp. 28-32.
Singh et al., J. Applied Physics 67(8), Apr. 1990, pp. 3785-3790.
Current State of High Temperature Superconductive Electronic Devices, by Susumu Takada, Applied Physics, vol. 62, No. 5, 1993, pp. 443-454.

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